SUD50P08-25L features ? trenchfet ? power mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) - 80 0.0252 at v gs = - 10 v - 50 55 nc 0.029 at v gs = - 4.5 v - 47 to-252 s gd top view drain connected to tab ordering information: SUD50P08-25L-e3 (lead (pb)-free) s g d p-channel mosfet notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 sec. d. maximum under steady state conditions is 40 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 80 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d - 50 a a t c = 70 c - 42.5 a t a = 25 c - 12.5 b, c t a = 70 c - 10.5 b, c pulsed drain current i dm - 40 continuous source-drain diode current t c = 25 c i s - 50 a t a = 25 c - 6.9 b, c avalanche current l = 0.1 mh i as - 45 single-pulse avalanche energy e as 101 mj maximum power dissipation t c = 25 c p d 136 w t c = 70 c 95 t a = 25 c 8.3 b, c t a = 70 c 5.8 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 sec r thja 15 18 c/w maximum junction-to-case (drain) steady state r thjc 0.85 1.1 rohs compliant www.freescale.net.cn 1 / 7 0v (d-s) 175 c mosfet p-channel 8
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 80 v v ds temperature coefficient v ds /t j i d = - 250 a - 73 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 80 v, v gs = 0 v - 1 a v ds = - 80 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 10 v a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 12.5 a 0.021 0.0252 v gs = - 4.5 v, i d = - 10.5 a 0.024 0.029 forward transconductance a g fs v ds = - 15 v, i d = - 12.5 a 52 s dynamic b input capacitance c iss v ds = - 40 v, v gs = 0 v, f = 1 mhz 4700 pf output capacitance c oss 320 reverse transfer capacitance c rss 235 total gate charge q g v ds = - 40 v, v gs = - 10 v, i d = - 12.5 a 105 160 nc v ds = - 40 v, v gs = - 4.5 v, i d = - 12.5 a 55 85 gate-source charge q gs 16 gate-drain charge q gd 26 gate resistance r g f = 1 mhz 4 tu r n - o n d e l ay t i m e t d(on) v dd = - 40 v, r l = 3.8 i d ? - 10.5 a, v gen = - 10 v, r g = 1 45 70 ns rise time t r 220 330 turn-off delay time t d(off) 95 145 fall time t f 110 165 tu r n - o n d e l ay t i m e t d(on) v dd = - 40 v, r l = 3.8 i d ? - 10.5 a, v gen = - 4.5 v, r g = 1 15 25 ns rise time t r 25 40 turn-off delay time t d(off) 105 160 fall time t f 100 150 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 50 a pulse diode forward current a i sm - 40 body diode voltage v sd i s = - 10.5 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 10.5 a, di/dt = 100 a/s, t j = 25 c 55 85 ns body diode reverse recovery charge q rr 110 165 nc reverse recovery fall time t a 37 ns reverse recovery rise time t b 18 www.freescale.net.cn 2 / 7 SUD50P08-25L 0v (d-s) 175 c mosfet p-channel 8
typical characteristics 25 c unless noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 thru 4 v 3 v v ds - drain-to-source voltage (v) - drain current (a) i d 0.020 0.021 0.022 0.023 0.024 0.025 0.026 0 5 10 15 20 25 30 35 40 v gs = 10 v i d - drain current (a) v gs = 6 v r ds(on) - on-resistance ( ) 0 2 4 6 8 10 0 20406080100120 i d = 12.5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 64 v v ds = 40 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 c t a = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1020304050607080 c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) c rss 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v t j - junction temperature (c) r ds(on) - on-resistance (normalized) i d = 12.5 a v gs = 6 v www.freescale.net.cn 3 / 7 SUD50P08-25L 0v (d-s) 175 c mosfet p-channel 8
typical characteristics 25 c unless noted source-drain diode forward voltage threshold voltage 1.0 1.2 1 10 40 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a t j - temperature (c) v gs(th) (v) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.01 0.02 0.03 0.04 0.05 2345678910 v gs - gate-to-source voltage (v) r ds(on) - drain-to-source on-resistance ( ) t a = 25 c t a = 125 c 0 20 35 5 10 power (w) time (sec) 25 10 1000 1 0.1 0.01 15 30 100 safe operating area, junction-to-ambient 100 1 0.1 1 10 1000 0.001 10 - drain current (a) i d 0.1 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified 0.01 100 1 ms 10 ms 100 ms dc 1 s 10 s t a = 25 c single pulse 100 s *limited by r ds(on) www.freescale.net.cn 4 / 7 SUD50P08-25L 0v (d-s) 175 c mosfet p-channel 8
typical characteristics 25 c unless noted *the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance , and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* single pulse avalanche capability 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 i d - drain current (a) t c - case temperature (c) package limited 100 0.000001 0.0001 0.01 1 10 0.00001 t a - time in avalanche (sec) i c - peak avalanche current (a) t a = l i d bv - v dd 0.001 power derating 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 t c - case temperature (c) power www.freescale.net.cn 5 / 7 SUD50P08-25L 0v (d-s) 175 c mosfet p-channel 8
typical characteristics 25 c unless noted normalized thermal transient impedance, junction-to-ambient 10 -2 1 10 1000 10 -1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 0.02 single pulse www.freescale.net.cn 6 / 7 SUD50P08-25L 0v (d-s) 175 c mosfet p-channel 8
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